ElectricalCharacterizationofOrganicElectronicMaterialsandDevices

ThinklikeanelectronOrganicelectronicmaterialshavemanyapplicationsandpotentialinlow-costelectronicssuchaselectronicbarcodesandinlightemittingdevices,duetotheireasilytailoredproperties.Whilethechemicalaspectsandcharacterizationhavebeenwidelystudied,characterizationoftheelectricalpropertieshasbeenneglected,andclassictextbookmodelinghasbeenapplied.Thisismoststrikingintheanalysisofthin-filmtransistors(TFTs)usingthick“bulk”transistor(MOS-FET)descriptions.AtfirstglancetheTFTsappeartobehaveasregularMOS-FETs.However,uponcloserexaminationitisclearthatTFTsareuniqueandmerittheirownmodel.Understandingandinterpretingmeasurementsoforganicdevices,whichareoftenseenasblack-boxmeasurements,iscriticaltodevelopingbetterdevicesandthis,therefore,hastobedonewithcare.ElectricalCharacterizationofOrganicElectronicMaterialsandDevicesGivesnewinsightsintotheelectronicpropertiesandmeasurementtechniquesforlow-mobilityelectronicdevicesCharacterizesthethin-filmtransistorusingitsownmodelLinksthephenomenaseenindifferentdevicestructuresanddifferentmeasurementtechniquesPresentsclearlybothhowtoperformelectricalmeasurementsoforganicandlow-mobilitymaterialsandhowtoextractimportantinformationfromthesemeasurementsProvidesamuch-neededtheoreticalfoundationfororganicelectronics