Magnetic Memory: Fundamentals and Technology

作者 Denny D. Tang著
出版社 Cambridge University Press
出版时间 2010年6月第1版
ISBN 9780521449649
定价 1674.90

内容简介

Ifyouareasemiconductorengineeroramagneticsphysicistdevelopingmagneticmemory,gettheinformationyouneedwiththis,thefirstbookonmagneticmemory.Frommagneticstotheengineeringdesignofmemory,thispracticalbookexplainskeymagneticpropertiesandhowtheyarerelatedtomemoryperformance,characterizationmethodsofmagneticfilms,andtunnelingmagnetoresistanceeffectdevices.Italsocoversmemorycelloptions,arrayarchitecture,circuitmodels,andread-writeengineeringissues.You'llunderstandthesoftfailnatureofmagneticmemory,whichisverydifferentfromthatofsemiconductormemory,aswellasmethodstodealwiththeissue.You'llalsogetinvaluableproblem-solvinginsightsfromreal-worldmemorycasestudies.Thisisanessentialbookforsemiconductorengineerswhoneedtounderstandmagnetics,andformagneticsphysicistswhoworkwithMRAM.Itisalsoavaluablereferenceforgraduatestudentsworkinginelectronic/magneticdeviceresearch.

作者简介

DennyD.TangisVicePresidentofMagICTechnologies,Inc.,andhasover30years'experienceinthesemiconductorindustry.AfterreceivinghisPh.D.inElectricalEngineeringfromTheUniversityofMichiganin1975,hespent15yearsatIBMT.J.WatsonResearchCenter,YorktownHeights,11yearsatIBMAlmadenResearchCenteratSanJoséand6yearsatTaiwanSemiconductorManufacturingCompany(TSMC).HeisaFellowoftheIEEE,TSMCandtheIndustrialTechnologyResearchInstitute(ITRI).Yuan-JenLeeisaSeniorEngineeratMagICTechnologies,Inc.,wherehedevelopsadvancedmagneticmemorytechnology.HereceivedhisPh.D.fromtheNationalTaiwanUniversityin2003,afterwhichheworkedforITRI,Taiwan,developingtoggleMRAMandspin-torqueMRAM.

— END —